XP8081

Composite Transistors XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For analog switching (Tr1)/switching (Tr2) 0.65 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 1 2 3 6 5 4 0.9±0.1 q 2SK1103+UN1213 (transistors with built-in resistor) 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 20 10 50 50 100 150 150 –55 to +150 Unit V mA mA V V mA mW ˚C ˚C 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 9Z Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 –0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors XP8081 (Ta=25˚C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = –10µA, VDS = 0 VDS = 10V, VGS = 0 VGS = –30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz 1.8 2.5 400 7 1.5 1.5 min –50 0.2 2.2 –10 –1.0 typ max Unit V mA nA V mS Ω pF pF pF s E...