SILICON EPITAXIAL PLANAR SWITCHING DIODE
SHANGHAI SUNRISE ELECTRONICS CO., LTD. XR-85
SILICON EPITAXIAL PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V FORWARD CURRE...
Description
SHANGHAI SUNRISE ELECTRONICS CO., LTD. XR-85
SILICON EPITAXIAL PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V FORWARD CURRENT: 100mA
FEATURES
Small glass structure ensures high reliability Low leakage High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension
TECHNICAL SPECIFICATION
DO - 34
MECHANICAL DATA
Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Glass,hermetically sealed Polarity: Color band denotes cathode Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified) RATINGS
Reverse Voltage Peak Reverse Voltage Forward Current (average) Forward Voltage (IF=10mA) Reverse Current (VR=20V) Reverse Current (VR=20V,TJ=100 C) Capacitance (Note 1) Forward Differential Resistor (IF=10mA, f=100MHz) Thermal Resistance (junction to ambient) (Note 2)
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SYMBOL
VR VRM IO VF IR1 IR2 Ct rF Rθ(ja)
VALUE
20 35 100 1 100 10 1.5 0.6 0.35
UNITS
V V mA V nA µA pF Ω
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C/mW
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TSTG,TJ Operating Junction and Storage Temperature Range -55 ~ +150 Notes: 1: VR=10V, f=1 MHz 2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
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