BARRIER DIODE. YG801C04R Datasheet

YG801C04R Datasheet PDF, Equivalent


Part Number

YG801C04R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG801C04R Datasheet PDF


YG801C04R Datasheet
YG801C04R
SCHOTTKY BARRIER DIODE
(40V / 5A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
40 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=125°C
Square wave
Sine wave 10ms
48
1500
5*
100
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=2.0A
0.55 V
Reverse current **
IR VR=VRRM
5.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
3.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG801C04R Datasheet
(40V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
Tj=150 oC
Tj=125oC
Tj=100oC
1 Tj=25oC
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
Forward Power Dissipation
3.5
Io
3.0
λ
2.5 360°
2.0 Square wave λ=60o
Square wave λ=120o
1.5
Sine wave λ=180o
Square wave λ=180o
DC
1.0
0.5
0.0
0.0
Per 1element
0.5 1.0 1.5 2.0 2.5
Io Average Forward Current (A)
3.0
Current Derating (Io-Tc)
160
150
140
DC
130 Sine wave λ=180o
Square wave λ=180o
120 Square wave λ=120o
110
100
90
360°
λ Io
VR=30V
Square wave λ=60o
80
01234567
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
8
YG801C04R
Reverse Characteristic (typ.)
Tj=150oC
101
Tj=125oC
100 Tj=100oC
10-1
10-2
10-3
0
Tj=25oC
10 20 30 40
VR Reverse Voltage (V)
50
Reverse Power Dissipation
2.0
360°
VR
1.5 α
DC
1.0
α=180o
0.5
0.0
0
10 20 30 40 50
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
1000
100
10
10
100
VR Reverse Voltage (V)


Features Datasheet pdf YG801C04R SCHOTTKY BARRIER DIODE (40V / 5A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min Fe atures Low VF Super high speed switchin g. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 -0 +0 .2 2.7±0.2 Applications High speed p ower switching. JEDEC EIAJ SC-67 Con nection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum Ra tings Item Repetitive peak reverse volt age Repetitive peak surge reverse volta ge Isolation voltage Average output cur rent Surge current Operating junction t emperature Storage temperature Symbol V RRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=125°C Square wave Sine w ave 10ms Conditions Rating 40 48 1500 5* 100 -40 to +150 -40 to +150 Unit V V V A A °C °C Electrical Characteris tics (Ta=25°C Unless otherwise specifi ed ) Item Forward voltage drop ** Rever se current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=2.0A VR=V.
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