BARRIER DIODE. YG802C04R Datasheet

YG802C04R Datasheet PDF, Equivalent


Part Number

YG802C04R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG802C04R Datasheet PDF


YG802C04R Datasheet
YG802C04R
SCHOTTKY BARRIER DIODE
(40V / 10A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
40 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=95°C
Square wave
Sine wave 10ms
48
1500
10*
120
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=4.0A
0.55 V
Reverse current **
IR VR=VRRM
5.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
3.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG802C04R Datasheet
(40V / 10A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150 oC
Tj=125 oC
Tj=100 oC
Tj=25 oC
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VF Forward Voltage (V)
1.4
Forward Power Dissipation
7.0
6.5
Io
6.0
5.5 λ
5.0 360°
4.5
4.0 Square wave λ=60 o
Square wave λ=120 o
3.5 Sine wave λ=180 o
3.0 Square wave λ=180 o
DC
2.5
2.0
1.5
1.0
0.5
Per 1element
0.0
012345
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130 DC
120
Sine wave λ=180 o
110 Square wave λ=180 o
100 Square wave λ=120 o
90
80 360°
λ
70 Io
VR=30V
60
Square wave λ=60 o
50
0 2 4 6 8 10 12 14
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
16
YG802C04R
Reverse Characteristic (typ.)
102
Tj=150 oC
101 Tj=125oC
Tj=100 oC
100
10-1
10-2
Tj=25oC
10-3
0
10 20 30 40
VR Reverse Voltage (V)
50
Reverse Power Dissipation
12
360°
10 VR
α
8
DC
6
α=180o
4
2
0
0 5 10 15 20 25 30 35 40 45 50
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
1000
100
1
10
VR Reverse Voltage (V)
100


Features Datasheet pdf YG802C04R SCHOTTKY BARRIER DIODE (40V / 10A TO-22OF15) Outline Drawings 10±0. 5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6. 3 2.7±0.2 3.7±0.2 1.2±0.2 13Min F eatures Low VF Super high speed switchi ng. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC-67 Appli cations High speed power switching. Co nnection Diagram 2 1 3 Maximum Ratings and Characteristics Absolute Maximum R atings Item Repetitive peak reverse vol tage Repetitive peak surge reverse volt age Isolation voltage Average output cu rrent Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns , duty=1/40 Terminals to Case, AC. 1min . duty=1/2, Tc=95°C Square wave Sine w ave 10ms Conditions Rating 40 48 1500 10* 120 -40 to +150 -40 to +150 Unit V V V A A °C °C * Out put current of centertap full wave connection. Electri cal Characteristics (Ta=25°C Unless ot herwise specified ) Item Forward voltage drop ** Reverse current ** Thermal re.
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