YG805C06R Datasheet: SCHOTTKY BARRIER DIODE (60V / 20A TO-22OF15)





YG805C06R SCHOTTKY BARRIER DIODE (60V / 20A TO-22OF15) Datasheet

Part Number YG805C06R
Description SCHOTTKY BARRIER DIODE (60V / 20A TO-22OF15)
Manufacture Fuji Electric
Total Page 3 Pages
PDF Download Download YG805C06R Datasheet PDF

Features: YG805C06R SCHOTTKY BARRIER DIODE (60V / 20A TO-22OF15) Outline Drawings 10±0. 5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6. 3 2.7±0.2 13Min Features Low VF Sup er high speed switching. High reliabili ty by planer design. 3.7±0.2 1.2±0. 2 15±0.3 0.7±0.2 2.54±0.2 0.6 +0 .2 -0 2.7±0.2 Applications High spee d power switching. JEDEC EIAJ SC-67 Connection Diagram 2 1 3 Maximum Ratin gs and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse v oltage Repetitive peak surge reverse vo ltage Isolation voltage Average output current Surge current Operating junctio n temperature Storage temperature Symbo l VRRM VRSM Viso IO IFSM Tj Tstg tw=500 ns, duty=1/40 Terminals to Case, AC. 1m in. duty=1/2, Tc= °C Square wave Sine wave 10ms Conditions Rating 60 60 1500 20* 120 -40 to +150 -40 to +150 Unit V V V A A °C °C * Out put current of centertap full wave connection. Electr ical Characteristics (Ta=25°C Unless o therwise specified ) Item Forward voltage drop ** Reverse current ** Thermal r.

Keywords: YG805C06R, datasheet, pdf, Fuji Electric, SCHOTTKY, BARRIER, DIODE, 60V, /, 20A, TO-22OF15, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

YG805C06R
SCHOTTKY BARRIER DIODE
(60V / 20A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
60 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc= °C
Square wave
Sine wave 10ms
60
1500
20*
120
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=8A
0.58 V
Reverse current **
IR VR=VRRM
15 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

        






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)