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Z0402MF Dataheets PDF



Part Number Z0402MF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 4A TRIACS
Datasheet Z0402MF DatasheetZ0402MF Datasheet (PDF)

Standard Z04 4 A Triacs Main features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA A2 G A1 Description The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. A1 A2 G TO202-3 Or.

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Standard Z04 4 A Triacs Main features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA A2 G A1 Description The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. A1 A2 G TO202-3 Order codes Part Number Z04xxyF(1) 1. xx = sensitivity, y = voltage Marking Z04xxyF(1) Table 1. Absolute maximum ratings Symbol Parameter IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj RMS on-state current (full sine wave) Non repetitive surge peak on-state current F = 50 Hz (full cycle, Tj initial = 25° C) F = 60 Hz I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Peak gate current tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range Tamb = 25° C Tl = 30° C t = 20 ms t = 16.7 ms Tj = 125° C Tj = 125° C Tj = 125° C Value Unit 4 A 20 21 2.2 20 1.2 0.2 - 40 to + 150 - 40 to + 125 A A²s A/µs A W °C May 2006 Rev 7 1/8 www.st.com 8 Characteristics Z04 1 Characteristics Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified) Symbol Test Conditions Quadrant Z04 Unit 02 05 09 10 IGT (1) VGT VD = 12 V RL = 30 Ω I - II - III - IV MAX . 3 ALL MAX . VGD VD = VDRM RL = 3.3 kΩ Tj = 125° C ALL IH (2) IT = 50 mA MIN. MAX . 3 IL IG = 1.2 IGT I - III - IV II dV/dt (2) VD = 6 % VDRM gate open Tj = 110° C (dV/dt)c (2) (dI/dt)c = 1.8 A/ms Tj = 110° C MAX 6 . 12 MIN. 10 MIN. 0.5 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. 5 10 25 mA 1.3 V 0.2 V 5 10 25 mA 10 15 25 mA 15 25 50 20 100 200 V/µs 1 2 5 V/µs Table 3. Static Characteristics Symbol Test Conditions VTM (1) Vto (1) Rd (1) IDRM IRRM ITM = 5.5 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25° C Tj = 125° C Tj = 125° C Tj = 25° C Tj = 125° C 1. for both polarities of A2 referenced to A1. MAX. MAX. MAX. MAX. Value Unit 2.0 V 0.95 V 180 mΩ 5 µA 0.5 mA Table 4. Thermal resistances Symbol Parameter Value Unit Rth(j-I) Rth(j-a) Junction to lead (AC) Junction to ambient 15 ° C/W 100 ° C/W 2/8 Z04 Characteristics Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus ambient temperature (full cycle) P(W) 7 6 5 4 IT(RMS)(A) 4.5 4.0 3.5 3.0 2.5 Rth(j-a) = Rth(j-l) 3 2.0 1.5 Rth(j-a) = 100°C/W 2 1.0 1 IT(RMS)(A) 0 0.5 Tamb (°C) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 Figure 3. Relative variation of thermal impedance versus pulse duration Figure 4. Relative variation of gate trigger current, holding current and latc.


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