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Z0402NF Dataheets PDF



Part Number Z0402NF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 4A TRIACS
Datasheet Z0402NF DatasheetZ0402NF Datasheet (PDF)

Standard Z04 4 A Triacs Main features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA A2 G A1 Description The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. A1 A2 G TO202-3 Or.

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Standard Z04 4 A Triacs Main features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA A2 G A1 Description The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. A1 A2 G TO202-3 Order codes Part Number Z04xxyF(1) 1. xx = sensitivity, y = voltage Marking Z04xxyF(1) Table 1. Absolute maximum ratings Symbol Parameter IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj RMS on-state current (full sine wave) Non repetitive surge peak on-state current F = 50 Hz (full cycle, Tj initial = 25° C) F = 60 Hz I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Peak gate current tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range Tamb = 25° C Tl = 30° C t = 20 ms t = 16.7 ms Tj = 125° C Tj = 125° C Tj = 125° C Value Unit 4 A 20 21 2.2 20 1.2 0.2 - 40 to + 150 - 40 to + 125 A A²s A/µs A W °C May 2006 Rev 7 1/8 www.st.com 8 Characteristics Z04 1 Characteristics Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified) Symbol Test Conditions Quadrant Z04 Unit 02 05 09 10 IGT (1) VGT VD = 12 V RL = 30 Ω I - II - III - IV MAX . 3 ALL MAX . VGD VD = VDRM RL = 3.3 kΩ Tj = 125° C ALL IH (2) IT = 50 mA MIN. MAX . 3 IL IG = 1.2 IGT I - III - IV II dV/dt (2) VD = 6 % VDRM gate open Tj = 110° C (dV/dt)c (2) (dI/dt)c = 1.8 A/ms Tj = 110° C MAX 6 . 12 MIN. 10 MIN. 0.5 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. 5 10 25 mA 1.3 V 0.2 V 5 10 25 mA 10 15 25 mA 15 25 50 20 100 200 V/µs 1 2 5 V/µs Table 3. Static Characteristics Symbol Test Conditions VTM (1) Vto (1) Rd (1) IDRM IRRM ITM = 5.5 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25° C Tj = 125° C Tj = 125° C Tj = 25° C Tj = 125° C 1. for both polarities of A2 referenced to A1. MAX. MAX. MAX. MAX. Value Unit 2.0 V 0.95 V 180 mΩ 5 µA 0.5 mA Table 4. Thermal resistances Symbol Parameter Value Unit Rth(j-I) Rth(j-a) Junction to lead (AC) Junction to ambient 15 ° C/W 100 ° C/W 2/8 Z04 Characteristics Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus ambient temperature (full cycle) P(W) 7 6 5 4 IT(RMS)(A) 4.5 4.0 3.5 3.0 2.5 Rth(j-a) = Rth(j-l) 3 2.0 1.5 Rth(j-a) = 100°C/W 2 1.0 1 IT(RMS)(A) 0 0.5 Tamb (°C) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 Figure 3. Relative variation of thermal impedance versus pulse duration Figure 4. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) K=[Zth(j-a)/Rth(j-a)] 1E+0 1E-1 1E-2 1E-3 1E-3 1E-2 tp(s) 1E-1 1E+0 1E+1 1E+2 5E+2 IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C] 2.5 2.0 1.5 IGT IH & IL 1.0 0.5 Tj (°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Figure 5. Surge peak on-state current versus number of cycles Figure 6. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t ITSM (A) 25 20 15 10 5 0 1 Repetitive Tamb = 25°C Non repetitive Tj initial = 25°C Number of cycles 10 100 t=20ms One cycle 1000 ITSM (A), I2t (A2s) 500 100 dI/dt limitation: 20A/µs 10 1 0.01 tp (ms) 0.10 1.00 Tj initial = 25°C ITSM I2t 10.00 3/8 Characteristics Z04 Figure 7. On-state characteristics (maximum values) Figure 8. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) ITM(A) 20.0 10.0 Tj = Tjmax. 1.0 Tj = 25°C Tj=max. Vt0=0.95 V VTM (V) Rd=180 mΩ 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Z0402 0.4 Z0405 0.2 (dV/dt)c (V/µs) 0.0 0.1 1.0 10.0 Z0409 Z0410 100.0 Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj Specified] 6 5 4 3 2 1 Tj (°C) 0 0 25 50 75 100 125 4/8 Z04 Ordering information scheme 2 Ordering information scheme Triac series Current 04 = 4A Sensitivity 02 = 3mA 05 = 5mA 09 = 10mA 10 = 25mA Voltage M = 600V S = 700V N = 800V Package F = TO202-3 Packing mode 0AA2 = Tube Z 04 xx y F [BLANK] 0AA2 Table 5. Product selector Part Number Voltage 600 V 700 V 800 V Sensitivity Z0402MF Z0402SF Z0402NF Z0405MF Z0405SF Z0405NF Z0409MF Z0409SF Z0409NF Z0410MF Z0410SF Z0410NF X X X X X X X X X X X X 3 mA 3 mA 3 mA 5 mA 5 mA 5 mA 10 mA 10 mA 10 mA 25.


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