ZDT1049

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 – JANUARY 1996 ZDT1049 C1 C1 C2 C2 PARTMARKING DETAIL – T1049 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Tj:Tstg VALUE 80 25 5 20 5 500 -55 to +150 UNIT V V V A A mA °C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 360 ZDT1049 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES MIN. 80 80 25 80 5 TYP. 120 120 35 120 8.75 0.3 0.3 0.3 30 60 125 155 890 820 250 300 300 200 35 430 450 450 350 70 180 45 125 380 60 10 10 10 45 80 180 220 ...