ZDT705

SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT705 C1 C1 C2 C2 PARTMARKING DETAIL – T705 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -140 -120 -10 -4 -1 -55 to +150 UNIT V V V A A °C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 345 ZDT705 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 3K 3K 3K 2K MIN. -140 -120 -10 -0.1 -10 -10 -0.1 -1.3 -2.5 -1.8 -1.7 MAX. UNIT V V V µA µA µA µA...