ZHB6718

SM-8 BIPOLAR TRANSISTOR H-BRIDGE PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating PARTMARKING DETAIL – ZHB6718 ZHB6718 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPNs 20 20 5 6 2.5 PNPs -20 -20 -5 -6 -2.5 UNIT V V V A A °C Operating and Storage Temperature Range Tj:Tstg -55 to +150 SCHEMATIC DIAGRAM E1, E4 CONNECTION DIAGRAM C1,C2 B1 Q1 Q4 C1, C2 C3, C4 B2 Q2 Q3 B3 B4 B1 B2 E2,E3 B3 5 E1,E4 C3,C4 B4 6 7 E2, E3 8 1 2 3 4 ZHB6718 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Derate above 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Thermal Resistance - Junction to Ambient* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Rth(j-amb) SYMBOL Ptot VALUE 1.25 2 10 16 100 62.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W 100 80 60 40 20 0 100us D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse t1 tP D=t1 tP 60 50 40 30 20 10 0 100us 1ms 10ms 100ms 1s D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse t1 tP D=t1 tP 1ms 10ms 100ms Transient Thermal Resistance Single Transistor "On" 2.0 10 Pulse Width 1s 10s 100s Transient Thermal Resistance Q1 and Q3 or Q2 and Q...