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ZHB6790 Dataheets PDF



Part Number ZHB6790
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description BIPOLAR TRANSISTOR H-BRIDGE
Datasheet ZHB6790 DatasheetZHB6790 Datasheet (PDF)

SM-8 BIPOLAR TRANSISTOR H-BRIDGE PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating PARTMARKING DETAIL – ZHB6790 ZHB6790 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPNs 50 40 5 6 2 PNPs -50 -40 -5 -6 -2 UNIT V V V A A .

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SM-8 BIPOLAR TRANSISTOR H-BRIDGE PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating PARTMARKING DETAIL – ZHB6790 ZHB6790 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPNs 50 40 5 6 2 PNPs -50 -40 -5 -6 -2 UNIT V V V A A °C Operating and Storage Temperature Range Tj:Tstg -55 to +150 SCHEMATIC DIAGRAM E1, E4 CONNECTION DIAGRAM C1,C2 B1 Q1 Q4 C1, C2 C3, C4 B2 Q2 Q3 B3 B4 B1 B2 E2,E3 B3 5 E1,E4 C3,C4 B4 6 7 E2, E3 8 1 2 3 4 ZHB6790 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Derate above 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally Thermal Resistance - Junction to Ambient* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally SYMBOL Ptot VALUE 1.25 2 10 16 100 62.5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W 100 80 60 D=1 t1 D=t1 tP 60 50 40 D=0.5 D=0.2 D=0.1 t1 D=t1 tP tP tP 40 20 0 100us 30 D=1 20 10 0 100us 1ms 10ms 100ms 1s D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse D=0.05 Single Pulse 1ms 10ms 100ms Transient Thermal Resistance Single Transistor "On" 2.0 10 Pulse Width 1s 10s 100s Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On" Pulse Width 10s 100s 1.5 1 Dual T ransistors † Single Transistor 1.0 0.5 0 Full Copper Minimum Copper Dual T ransistors † Single Transistor 0.1 0 20 40 T - Temperature (°C) 60 80 100 120 140 160 0.1 Derating curve Pd v Pcb Area Comparison Pcb Area (inches squared) 1 10 * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. †"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on. ZHB6790 PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. -50 -40 -5 -0.1 -0.1 -0.14 -0.25 -0.45 -0.75 -1.0 -0.75 300 200 150 100 225 24 35 600 MHz pF pF ns TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VEB=-4V IC=-100mA, IB=-0.5mA* IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-100mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1= -50mA IB2=-50mA, VCC=-10V V V V V V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. ZHB6790 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. 50 40 5 0.1 0.1 0.1 0.16 0.5 0.35 0.9 0.73 500 400 150 150 200 16 33 1300 MHz pF pF ns TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=35V VEB=4V IC=100mA, IB=0.5mA* IC=500mA, IB=2.5mA* IC=1A, IB=5mA* IC=2A, IB=30mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V V V V V V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. PNP TRANSISTOR TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC/IB =100 IC/IB =10 IC/IB =40 Tamb=25°C 1.8 1.6 1.4 ZHB6790 -55°C +25°C +100°C IC/IB =100 - (Volts) - (Volts) V 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 V 0.4 0.2 0 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100°C +25°C -55°C VCE=2V 1.6 750 1.4 -55°C +25°C +100°C IC/IB =100 - Normalised Gain - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 500 250 h 0 0.01 0.1 1 10 h 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C VCE =2V - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 V 0 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC ZHB6790 NPN TRANSISTO.


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