ZHCS756

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- NOVEMBER 1997 FEATURES: Low V F High Current Capability APPLICATIONS: DC - DC converters Mobile telecomms PCMCIA PARTMARK DETAIL: S76 7 1 ZHCS756 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 750mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 750 610 1500 12 5 500 -55 to + 150 125 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 250 285 350 440 520 600 760 50 17 12 290 330 410 500 610 700 900 100 MAX. UNIT V mV mV mV mV mV mV mV µA pF ns CONDITIONS. IR= 300 µA IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr V R= 45V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300 µs; duty cycle ≤2% . ZHCS756 TYPICAL CHARACTERISTICS 1 100m IR - Reverse Current (A) IF - Forward Current (A) 10m 1m 100u 10u 1u 100n +125°C +100°C 100m +50°C +25°C 10m 1m +125°C +25°C -55°C 1m -55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 VF - For...