X22C12

X22C12 1K Bit X22C12 Nonvolatile Static RAM DESCRIPTION 256 x 4 FEATURES High Performance CMOS —150ns RAM Access Time High Reliability —Store Cycles: 1,000,000 —Data Retention: 100 Years Low Power Consumption —Active: 40mA Max. —Standby: 100µA Max. Infinite Array Recall, RAM Read and Write Cycles Nonvolatile Store Inhibit: VCC = 3.5V Typical Fully TTL and CMOS Compatible JEDEC Standard 18-Pin 300-mil DIP 100% Compatible with X2212 —With Timing Enhancements The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less and the RECALL is completed within 1µs. Xicor NOVRAMs are designed for unlimited write operations to the RAM, either RECALLs from E2PROM or writes from the host. The X22C12 will reliably endure 1,000,000 STORE cycles. Inherent data retention is greater than 100 years. FUNCTIONAL DIAGRAM PIN CONFIGURATION PLASTIC DIP CERDIP STORE A7 A4 A3 A2 A1 A0 CS VSS STORE 1 2 3 4 5 6 7 8 9 18 17 16 15 X22C12 14 13 12 11 10 VCC A6 A5 I/O4 I/O3 I/O2 I/01 WE RECALL 3817 FHD F02 2 NONVOLATILE E PROM MEMORY ARRAY A0 A1 A2 A3 A4 STORE RECALL I/O1 I/O2 I/O3 I/O4 INPUT DATA CONTROL COLUMN SELECT CONTROL LOGIC VCC COLUMN I/O CIRCUITS VSS ROW SELECT STATIC RAM MEMORY ARRAY ARRAY RECALL SOIC A7 A4 A3 A2 A1 A0 CS VSS 1 2 3 4 5 6 7 8 9 10 X22C...