Alterable E2PROM. X2804C Datasheet

X2804C Datasheet PDF, Equivalent


Part Number

X2804C

Description

5 Volt/ Byte Alterable E2PROM

Manufacture

Xicor

Total Page 13 Pages
PDF Download
Download X2804C Datasheet PDF


X2804C Datasheet
X2804C
4K
X2804C
512 x 8 Bit
5 Volt, Byte Alterable E2PROM
FEATURES
90ns Access Time
Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or VPP Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
High Performance Advanced NMOS Technology
Fast Write Cycle Times
—16 Byte Page Write Operation
—Byte or Page Write Cycle: 5ms Typical
—Complete Memory Rewrite: 640ms Typical
—Effective Byte Write Cycle Time: 300µs
Typical
DATA Polling
—Allows User to Minimize Write Cycle Time
JEDEC Approved Byte-Wide Pinout
High Reliability
—Endurance: 10,000 Cycles
—Data Retention: 100 Years
DESCRIPTION
The Xicor X2804C is a 512 x 8 E2PROM, fabricated with
an advanced, high performance N-channel floating gate
MOS technology. Like all Xicor Programmable nonvola-
tile memories it is a 5V only device. The X2804C
features the JEDEC approved pinout for byte-wide
memories, compatible with industry standard RAMs,
ROMs and EPROMs.
The X2804C supports a 16-byte page write operation,
typically providing a 300µs/byte write cycle, enabling the
entire memory to be written in less than 640ms. The
X2804C also features DATA Polling, a system software
support scheme used to indicate the early completion of
a write cycle.
Xicor E2PROMs are designed and tested for applica-
tions requiring extended endurance. Inherent data re-
tention is greater than 100 years.
PIN CONFIGURATION
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
PLASTIC DIP
1 24
2 23
3 22
4 21
5 20
6 19
X2804C
7 18
8 17
9 16
10 15
11 14
12 13
VCC
A8
NC
WE
OE
NC
CE
I/O7
I/O6
I/O5
I/04
I/O3
6612 FHD F02.1
©Xicor, Inc. 1993, 1995 Patents Pending
6612-1.3 3/27/96 T2/C1/D1 NS
Characteristics subject to change without notice
1

X2804C Datasheet
X2804C
PIN DESCRIPTIONS
Addresses (A0–A8)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all
read/write operations. When CE is HIGH, power con-
sumption is reduced.
Output Enable (OE)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
PIN NAMES
Symbol
A0–A8
I/O0–I/O7
WE
CE
OE
VCC
VSS
NC
Description
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
+5V
Ground
No Connect
6612 PGM T01
FUNCTIONAL DIAGRAM
A0–A8
ADDRESS
INPUTS
X BUFFERS
LATCHES AND
DECODER
Y BUFFERS
LATCHES AND
DECODER
CE
OE
WE
VCC
VSS
CONTROL
LOGIC
4.096-BIT
E2PROM
ARRAY
I/O BUFFERS
AND LATCHES
I/O0–I/O7
DATA INPUTS/OUTPUTS
6612 FHD F01
2


Features Datasheet pdf X2804C 4K X2804C 5 Volt, Byte Alterable E2PROM DESCRIPTION 512 x 8 Bit FEATU RES • • • • • • • 90n s Access Time Simple Byte and Page Writ e —Single 5V Supply —No External Hi gh Voltages or VPP Control Circuits — Self-Timed —No Erase Before Write — No Complex Programming Algorithms —No Overerase Problem High Performance Adv anced NMOS Technology Fast Write Cycle Times —16 Byte Page Write Operation Byte or Page Write Cycle: 5ms Typical —Complete Memory Rewrite: 640ms Typi cal —Effective Byte Write Cycle Time: 300µs Typical DATA Polling —Allows User to Minimize Write Cycle Time JEDEC Approved Byte-Wide Pinout High Reliabi lity —Endurance: 10,000 Cycles —Dat a Retention: 100 Years The Xicor X2804 C is a 512 x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvolatile memorie s it is a 5V only device. The X2804C fe atures the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs, ROMs an.
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