X28HT010 E2PROM Datasheet

X28HT010 Datasheet, PDF, Equivalent


Part Number

X28HT010

Description

High Temperature/ 5 Volt/ Byte Alterable E2PROM

Manufacture

Xicor

Total Page 13 Pages
Datasheet
Download X28HT010 Datasheet


X28HT010
X28HT010
1M
X28HT010
128K x 8 Bit
High Temperature, 5 Volt, Byte Alterable E2PROM
FEATURES
175°C Full Functionality
Simple Byte and Page Write
—Single 5V Supply
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Highly Reliable Direct Write™ Cell
—Endurance: 10,000 Write Cycles
—Data Retention: 100 Years
—Higher Temperature Functionality is Possible
by Operating in the Byte Mode.
DESCRIPTION
The Xicor X28HT010 is a 128K x 8 E2PROM, fabricated
with Xicor's proprietary, high performance, floating gate
CMOS technology which provides Xicor products supe-
rior high temperature performance characteristics. Like
all Xicor programmable non-volatile memories the
X28HT010 is a 5V only device. The X28HT010 features
the JEDEC approved pinout for byte-wide memories,
compatible with industry standard EPROMs.
The X28HT010 supports a 256-byte page write opera-
tion, effectively providing a 19µs/byte write cycle and
enabling the entire memory to be typically written in less
than 2.5 seconds.
Xicor E2PROMs are designed and tested for applica-
tions requiring extended endurance. Data retention is
specified to be greater than 100 years.
PIN CONFIGURATIONS
VBB
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
FLAT PACK
CERDIP
SOIC (R)
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
X28HT010
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
6613 FHD F02
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
6613-1.5 8/5/97 T2/C0/D0 EW
1
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15 17 19 21 22
A1 A0 I/O1 VSS I/O4 I/O7 CE
13 14 16 18 20 23 24
A2 A3
12 11
A10 OE
25 26
A4 A5
X28HT010
A11 A9
10 9
27 28
(BOTTOM VIEW)
A6 A7
87
A8 A13
29 30
A12 A15 NC VCC NC NC A14
6 5 2 36 34 32 31
A16 VBB NC WE NC
4 3 1 35 33
6613 FHD F21
Characteristics subject to change without notice

X28HT010
X28HT010
PIN DESCRIPTIONS
Addresses (A0–A16)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/
write operations. When CE is HIGH, power consumption
is reduced.
Output Enable (OE)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
Data In/Data Out (I/O0–I/O7)
Data is written to or read from the X28HT010 through the
I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28HT010.
Back Bias Voltage (VBB)
It is required to provide -3V on pin 1. This negative
voltage improves higher temperature functionality.
FUNCTIONAL DIAGRAM
PIN NAMES
Symbol
A0–A16
I/O0–I/O7
WE
CE
OE
VBB
VCC
VSS
NC
Description
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
–3V
+5V
Ground
No Connect
6613 PGM T01
A8–A16
X BUFFERS
LATCHES AND
DECODER
1M-BIT
E2PROM
ARRAY
A0–A7
Y BUFFERS
LATCHES AND
DECODER
CE
OE
WE
VCC
VSS
VBB
CONTROL
LOGIC AND
TIMING
2
I/O BUFFERS
AND LATCHES
I/O0–I/O7
DATA INPUTS/OUTPUTS
6613 FHD F01


Features X28HT010 1M X28HT010 High Temperature, 5 Volt, Byte Alterable E2PROM 128K x 8 Bit FEATURES • 175°C Full Function ality DESCRIPTION The Xicor X28HT010 i s a 128K x 8 E2PROM, fabricated with Xi cor's proprietary, high performance, fl oating gate CMOS technology which provi des Xicor products superior high temper ature performance characteristics. Like all Xicor programmable non-volatile me mories the X28HT010 is a 5V only device . The X28HT010 features the JEDEC appro ved pinout for byte-wide memories, comp atible with industry standard EPROMs. T he X28HT010 supports a 256-byte page wr ite operation, effectively providing a 19µs/byte write cycle and enabling the entire memory to be typically written in less than 2.5 seconds. Xicor E2PROMs are designed and tested for applicatio ns requiring extended endurance. Data r etention is specified to be greater tha n 100 years. • • Simple Byte and Page Write —Single 5V Supply —Self -Timed —No Erase Before Write —No Complex Programming Algorithms —No Overer.
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