VLB10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VLB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.1...
VLB10-12S
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI VLB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
Omnigold™ Metalization System
B
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 5.0 OC/W
DIM A B C D E F G H I J
D
H
I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10734
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB PG ηC IC = 15 mA IC = 50 mA
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
18 36 4.0 1.0
UNITS
V V V mA --pF dB
IE = 2.5 mA VCB = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 10 W IC = 250 mA f = 1.0 MHz f = 50 MHz
5.0
200 65
10 60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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