DMOS FET. VN0106 Datasheet

VN0106 FET. Datasheet pdf. Equivalent

VN0106 Datasheet
Recommendation VN0106 Datasheet
Part VN0106
Description N-Channel Enhancement-Mode Vertical DMOS FET
Feature VN0106; VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low.
Manufacture Supertex Inc
Datasheet
Download VN0106 Datasheet




Supertex  Inc VN0106
Supertex inc.
VN0104
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Device
Package Option
TO-92
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
VN0104
VN0104N3-G
VN1504NW
VN1504NJ
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
ND
(Die in waffle pack)
VN1504ND
Product Summary
BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
40 3.0
ID(ON)
(min)
(A)
2.0
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Configuration
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
SiVN YY = Year Sealed
0 1 0 4 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com



Supertex  Inc VN0106
VN0104
Thermal Characteristics
Package
(continIDuous)
(mA)
TO-92
350
Notes:
† ID (continuous) is limited by max rated Tj .
ID
(pulsed)
(A)
2.0
Power Dissipation
@TC = 25OC
(W)
1.0
θjc
(OC/W)
125
θja
(OC/W)
170
IDR
(mA)
350
IDRM
(A)
2.0
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
40 - - V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
0.8 - 2.4 V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
- -3.8 -5.5 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage
- - 100 nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 1.0
VGS = 0V, VDS = Max Rating
-
-
100
µA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
0.5 1.0
2.0 2.5
-
-
A VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance
- 3.0 5.0
- 2.5 3.0
Ω VGS = 5.0V, ID = 250mA
VGS = 10V, ID = 1.0A
ΔRDS(ON) Change in RDS(ON) with temperature
- 0.70 1.0 %/OC VGS = 10V, ID = 1.0A
GFS Forward transductance
300 450
- mmho VDS = 25V, ID = 500mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 55 65
VGS = 0V,
- 20 25 pF VDS = 25V,
- 5.0 8.0
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 3.0 5.0
- 5.0 8.0
VDD = 25V,
-
6.0 9.0
ns ID = 1.0A,
RGEN = 25Ω
- 5.0 8.0
VSD Diode forward voltage drop
- 1.2 1.8
V VGS = 0V, ISD = 1.0A
trr Reverse recovery time
- 400 -
ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tf
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
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Supertex  Inc VN0106
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0
0 10 20 30
VDS (volts)
VGS = 10V
9.0V
8.0V
7.0V
6.0V
5.0V
4.0V
3.0V
40
Transconductance vs. Drain Current
1.0
VDS = 25V
0.8
0.6 TA = -55OC
25OC
0.4 125OC
0.2
0
0
0.2 0.4 0.6 0.8
1.0
ID (amperes)
10 Maximum Rated Safe Operating Area
1.0
TO-92 (DC)
0.1
TC = 25OC
0.01
0.1
1.0 10
VDS (volts)
100
VN0104
Saturation Characteristics
2.5
VGS = 10V
2.0 9.0V
8.0V
7.0V
1.5 6.0V
1.0 5.0V
0.5 4.0V
3.0V
0
0
2.0 4.0
6.0 8.0
10
VDS (volts)
Power Dissipation vs. Case Temperature
2.0
1.0
TO-92
0
0 25 50 75 100 125 150
TC (OC)
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
tP (seconds)
TO-92
PD = 1.0W
TC = 25OC
1.0 10
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
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