VN2010L

www.DataSheet4U.com VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 D D D D D Low On-Resistance: 6 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) S 1 Device Marking Front View “S” VN 2010L xxyy “S” = Siliconix Logo xxyy = Date Code TO-92-18RM (TO-18 Lead Form) D 1 Device Marking Front View “S” BS 107 xxyy “S” = Siliconix Logo xxyy = Date Code G 2 G 2 D 3 S 3 Top View VN2010L Top View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70215 S-04279—Rev. C, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VN2010L 200 "30 0.19 0.12 0.8 0.8 ...