VNN1NV04

® VND1NV04 / VNN1NV04 / VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND1NV04 VNN1NV04 VNS1NV04 RDS(on) 250 mΩ Ilim 1.7 A Vclamp 2 40 V 1 2 3 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT SOT-223 SO-8 3 1 TO-252 (DPAK) PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE ORDER CODES: TO-252 (DPAK) SOT-223 SO-8 VND1NV04 VNN1NV04 VNS1NV04 POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET www.DataSheet4U.com DESCRIPTION The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Over Temperature Linear Current Limiter 3 SOURCE FC01000 February 2003 1/18 VND1NV04 / VNN1NV04 / VNS1NV04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dis...