VNP14N04FI

® VNB14N04/K14N04FM VNP14N04FI/VNV14N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 s s s s s s V c lamp 42 42 42 42 V V V V R DS(on) 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I l im 14 14 14 14 A A A A 3 1 s s s LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET D2PAK TO-263 SOT82-FM 3 1 2 10 1 DESCRIPTION The VNB14N04, VNK14N04FM, VNP14N04FI and VNV14N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect BLOCK DIAGRAM (∗) ISOWATT220 PowerSO-10 the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. (∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB June 1998 1/14 VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04 ABSOLUTE MAXIMUM RATING Symbol Parameter Pow erSO-10 D2PAK V DS V in ID IR V esd P tot Tj Tc T stg Drain-source Voltage (V in = 0) Input Voltage Drain Current Reverse DC O utput Current Electrostatic Discharge (C= 100 pF, R=1.5 KΩ ) Total Dissipation at T c = 25 C Operating Junction T emperature Case O perating T emperature Storage Tempe...