OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
VNP28N04
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
TYPE VNP28N04
s s s s s s
V clamp 42 V
R DS(on) 0.035 Ω
I l im 2...
Description
VNP28N04
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
TYPE VNP28N04
s s s s s s
V clamp 42 V
R DS(on) 0.035 Ω
I l im 28 A
s s
s
s
LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE
1
2
3
TO-220
DESCRIPTION The VNP28N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear BLOCK DIAGRAM
current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
April 1996
1/11
VNP28N04
ABSOLUTE MAXIMUM RATING
Symbol V DS V in ID IR V esd P to t Tj Tc T st g Parameter Drain-source Voltage (V in = 0) Input Voltage Drain Current Reverse DC O utput Current Electrostatic Discharge (C= 100 pF , R=1.5 KΩ ) Total Dissipation at T c = 25 o C Operating Junction T emperature Case Operating T emperature Storage Temperature Value Internally Clamped 18 Internally Limited -28 2000 83 Internally Limited Internally Limited -55 to 150 Unit V V A A V W
o o o
C C C
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.5 62.5
o o
C/W C/W
ELECTRICAL CH...
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