fully autoprotected Power MOSFET
Features
VNB35NV04 VNV35NV04
OMNIFET II fully autoprotected Power MOSFET
Datasheet − production data
Type RDS(on) Ilim...
Description
Features
VNB35NV04 VNV35NV04
OMNIFET II fully autoprotected Power MOSFET
Datasheet − production data
Type RDS(on) Ilim Vclamp
)VNB35NV04 10 mΩ(1)
VNV35NV04
t(s1. For PowerSO-10 only
30 A
40 V
duc■ Linear current limitation ro■ Thermal shut down P■ Short circuit protection te■ Integrated clamp ole■ Low current drawn from input pin s■ Diagnostic feedback through input pin Ob■ ESD protection -■ Direct access to the gate of the Power )MOSFET (analog driving) Obsolete Product(s■ Compatible with standard Power MOSFET
3 1
D2PAK
10
1
PowerSO-10
Description
The VNB35NV04 and VNV35NV04 are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
Table 1. Device summary
Pac...
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