Document
VP0204N6 I VP0204N7
" !!iupertex inc. VP0206N6/ VP0206N7
Ordering Information
BVDSS I BVDGS -40V -60V
*14-pin Side Brazed Ceramic Dip.
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
RDS(ON)
(max)
4Q 4n
Order Number I Package
14-Pin P-Dip
14-Pin C-Dip*
VP0204N6 VP0206N6
VP0204N7 VP0206N7
Features
o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,SS and fast switching speeds o High input impedance and high gain
Applications
o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Thermal Characteristics
Package
10 continuous
N-Channel
& IDA (single die) P-Channel
10 pulsed+ & 10AM+
N-Channel P-Channel
Power Dissipation @ Tc = 25°C*
BIB (OCIW)
Bic(OCIW)
• PulseleS! 300 ~S pulse, 2% duty cycle. t Total for package.
Plastic DIP
0.6A
2.SA
3W 83.3 41.6
Ceramic DIP
0.7A
2.SA
4W 62.5 31.2
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Electrical Characteristics
Refer to VP02A Data Sheet for detailed characteristics.
Pin Configuration
D.
G.
S4 11 NC
10 S3 9 G3 8 03
top view
14-pin DIP
10-33
.