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VP0204N7 Dataheets PDF



Part Number VP0204N7
Manufacturers Supertex Inc
Logo Supertex  Inc
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet VP0204N7 DatasheetVP0204N7 Datasheet (PDF)

VP0204N6 I VP0204N7 " !!iupertex inc. VP0206N6/ VP0206N7 Ordering Information BVDSS I BVDGS -40V -60V *14-pin Side Brazed Ceramic Dip. P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array RDS(ON) (max) 4Q 4n Order Number I Package 14-Pin P-Dip 14-Pin C-Dip* VP0204N6 VP0206N6 VP0204N7 VP0206N7 Features o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,SS an.

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VP0204N6 I VP0204N7 " !!iupertex inc. VP0206N6/ VP0206N7 Ordering Information BVDSS I BVDGS -40V -60V *14-pin Side Brazed Ceramic Dip. P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array RDS(ON) (max) 4Q 4n Order Number I Package 14-Pin P-Dip 14-Pin C-Dip* VP0204N6 VP0206N6 VP0204N7 VP0206N7 Features o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,SS and fast switching speeds o High input impedance and high gain Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Thermal Characteristics Package 10 continuous N-Channel & IDA (single die) P-Channel 10 pulsed+ & 10AM+ N-Channel P-Channel Power Dissipation @ Tc = 25°C* BIB (OCIW) Bic(OCIW) • PulseleS! 300 ~S pulse, 2% duty cycle. t Total for package. Plastic DIP 0.6A 2.SA 3W 83.3 41.6 Ceramic DIP 0.7A 2.SA 4W 62.5 31.2 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Electrical Characteristics Refer to VP02A Data Sheet for detailed characteristics. Pin Configuration D. G. S4 11 NC 10 S3 9 G3 8 03 top view 14-pin DIP 10-33 .


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