VP02A

" !iupertexinc. VP02A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVossl BVOGS -40V -60V -100V ROSION) (max) 40 40 40 'OION) (min) 1.5A 1.5A 1.5A Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices TO-39 VP0204N2 VP0206N2 VP0210N2 Order Number I Package TO-92 TO-220 Quad P-DIP - VP0204N5 VP0204N6 VP0206N3 VP0210N3 VP0206N5 VP0210N5 VP0206N6 - Quad C-DIP VP0204N7 VP0206N7 - Advanced DMOS Technology These enhancement-mode (normally-off) power tranSistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolartransistors and with the high input impedance and negative temperature coefficient inherent in MOS...