VP0550

Supertex inc. VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain Applications ►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Product Summary Part Number VP0550N3-G Package Option TO-92 Packing 1000/Bag BVDSS/BVDGS RDS(ON) (max) ID(ON) (min) VP0550N3-G P002 VP0550N3-G P003 -500V 125Ω -100mA VP0550N3-G P005 VP0550N3-G P013 TO-92 2000/Reel Pin Configuration VP0550N3-G P0...