2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
MOSEL VITELIC
V29LC51002 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
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Description
MOSEL VITELIC
V29LC51002 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
s s s s s 256Kx8-bit Organization Address Access Time: 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 30µs (Max) Minimum 1,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Low VCC Program Inhibit Below 3.5V CMOS and TTL Interface Packages: – 32-pin Plastic DIP – 32-pin PLCC
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The V29LC51002 is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The V29LC51002 features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.
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Device Usage Chart
Operating Temperature Range 0°C to 70°C Package Outline P J Access Time (ns) 90 Temperature Mark Blank
V29LC51002 Rev. 0.5 October 2000
1
MOSEL VITELIC
V 29 LC 51 002 –
V29LC51002
OPERATING VOLTAGE 51: 5V
DEVICE 90: 90ns
SPEED
PKG. P = PDIP J = PLCC
C51002-01
Pin Configurations
VCC WE A12 A15 A16 NC
N/C A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32...
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