Document
V-Data
Synchronous DRAM
VDS6616A4A 1M x 16 Bit x 4 Banks
General Description
The VDS6616A4A are four-bank Synchronous DRAMs organized as 1,048,576 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications
Features
•JEDEC standard LVTTL 3.3V power supply •MRS Cycle with address key programs
-CAS Latency (2 & 3) -Burst Length (1,2,3,8,& full page) -Burst Type (sequential & Interleave) •4 banks operation •All inputs are sampled at the positive edge of
the system clock •Burst Read single write operation •Auto & Self refresh •4096 refresh cycle •DQM for masking •Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. VDS6616A4A-5 VDS6616A4A-6 VDS6616A4A-7 VDS6616A4A-7.