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VFT300-28

Advanced Semiconductor

VHF POWER MOSFET Silicon N-Channel Enhancement Mode

VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High ...


Advanced Semiconductor

VFT300-28

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Description
VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG (D) A .080x45° B FULL R FEATURES: PG = 14 dB Typical at 175 MHz η D = 55% Typ. at POUT = 300 Watts Omnigold™ Metalization System E .1925 D C D D (4X).060 R M G H I F G N G Sources are connected to flange L J K MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O 16 A 65 V 65 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.6 OC/W TC = 25 OC O O DIM A B C D E F G H I J K L M N MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .100 / 2.54 .395 / 10.03 .850 / 21.59 .230 / 5.84 .390 / 9.91 .620 / 15.75 1.105 / 28.07 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .115 / 2.92 .230 / 5.84 .407 / 10.34 .870 / 22.10 ORDER CODE: ASI10707 MINIMUM TYPICAL MAXIMUM 65 5.0 1.0 1.0 5.0 1.5 3500 375 188 26 12 50 14 55 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS VDS GFS Ciss Coss Crss GPS ηD VGS = 0 V VDS = 28 V VDS = 0 V VDS = 10 V VGS = 10 V VDS = 10 V NONETEST CONDITIONS IDS = 100 mA VGS = 0 V VGS = 20 V ID = 100 mA ID = 10 A ID = 5 A UNITS V mA µA V V mS VGS = 28 V VDD = 28 V f = 175 MHz VDS = 0 V IDQ = 2 x 250 mA F = 1.0 MHz pF dB % REV. A POUT = 300 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH...




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