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VG3617801CT

Vanguard International Semiconductor

16Mb CMOS Synchronous Dynamic RAM

VIS Description VG3617801CT 16Mb CMOS Synchronous Dynamic RAM The VG3617801CT is CMOS Synchronous Dynamic RAMs organiz...


Vanguard International Semiconductor

VG3617801CT

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Description
VIS Description VG3617801CT 16Mb CMOS Synchronous Dynamic RAM The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP. Features Single 3.3V( ± 0.3V ) power supply Clock Frequency:100MHz Fully synchronous with all signals referenced to a positive clock edge Programmable CAS Iatency (2,3) Programmable burst length (1,2,4,8,& Full page) Programmable wrap sequence (Sequential/Interleave) Automatic precharge and controlled precharge Auto refresh and self refresh modes Dual Internal banks controlled by A11(Bank select) Simultaneous and independent two bank operation I/O level : LVTTL interface Random column access in every cycle X8 organization Input/output control by DQM 2048 refresh cycles/32ms Burst termination by burst stop and precharge command Burst read single write option Document:1G5-0133 Rev.1 Page 1 VIS Pin Configuration VDD DQ0 VG3617801CT 16Mb CMOS Synchronous Dynamic RAM 44-Pin Plastic TSOP(II)(400 mil) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 VSS DQ7 VSSQ DQ1 VSSQ DQ6 VDDQ DQ2 VDDQ DQ5 VSSQ DQ3 VSSQ DQ4 VG3617801CT 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 VDDQ NC NC WE CAS RAS CS VDDQ NC NC DQM CLK CKE NC (BS)A11 A10 A0 A1 A2 A3 VDD A9 A8 A7 A6 A...




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