16Mb CMOS Synchronous Dynamic RAM
VIS
Description
VG3617801CT 16Mb CMOS Synchronous Dynamic RAM
The VG3617801CT is CMOS Synchronous Dynamic RAMs organiz...
Description
VIS
Description
VG3617801CT 16Mb CMOS Synchronous Dynamic RAM
The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.
Features
Single 3.3V( ± 0.3V ) power supply Clock Frequency:100MHz Fully synchronous with all signals referenced to a positive clock edge Programmable CAS Iatency (2,3) Programmable burst length (1,2,4,8,& Full page) Programmable wrap sequence (Sequential/Interleave) Automatic precharge and controlled precharge Auto refresh and self refresh modes Dual Internal banks controlled by A11(Bank select) Simultaneous and independent two bank operation I/O level : LVTTL interface Random column access in every cycle X8 organization Input/output control by DQM 2048 refresh cycles/32ms Burst termination by burst stop and precharge command Burst read single write option
Document:1G5-0133
Rev.1
Page 1
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Pin Configuration
VDD
DQ0
VG3617801CT 16Mb CMOS Synchronous Dynamic RAM
44-Pin Plastic TSOP(II)(400 mil)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38
VSS
DQ7
VSSQ
DQ1
VSSQ
DQ6
VDDQ
DQ2
VDDQ
DQ5
VSSQ
DQ3
VSSQ
DQ4
VG3617801CT
37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
VDDQ
NC NC WE CAS RAS CS
VDDQ
NC NC DQM CLK CKE NC
(BS)A11 A10 A0 A1 A2 A3 VDD
A9 A8 A7 A6 A...
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