WIDE-BAND AMPLIFIER
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG103B
WIDE-BAND AMPLIFIER
µPG103B is GaAs integrated circuit designed as wide b...
Description
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG103B
WIDE-BAND AMPLIFIER
µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers.
This device is most suitable for the microwave communication system and the measurement equipment.
FEATURES
Ultra wide band : f = 50 MHz to 3 GHz Input/output impedance matched to 50 Ω Hermetic sealed ceramic package assures high reliability
ORDERING INFORMATION
PART NUMBER PACKAGE T-31, 8 PIN CERAMIC
µPG103B
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain Voltage Gate Voltage Input Voltage Input Power Total Power Dissipation* Operating Case Temperature Storage Temperature * TC ≤ 125 ˚C VDD VGG Vin Pin Ptot Topt Tstg +8 –8 –3 to +0.6 +15 1.5 –65 to +125 –65 to +175 V V V dBm W ˚C ˚C
RECOMMENDED OPERATING CONDITIONS (TA = 25 ˚C)
Drain Voltage Gate Voltage Operating Case Temperature VDD VGG Topt +5.0±0.5 –5.0±0.5 –50 to +80 V V ˚C
Document No. P11342EJ1V0DS00 (1st edition) Date Published March 1996 P Printed in Japan
©
1996
µPG103B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C, VDD = +5V, VGG = –5V)
CHARACTERISTIC Drain Current Gate Current Power Gain Power Gain Gain Flatness Gain Flatness Noise Figure Noise Figure Input Return Loss Input Return Loss Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD IGG Gp Gp Gp Gp NF NF RLin RLin RLin RLout ISOL Po (1dB) 6 10 6 10 30 +7 12 10 ±1.5 ±2.0 4.0 4.5 10 14 10 16 40 +9 ±2.0 ±3.0 4.5 5.0 MIN. 40 TYP. 55 1 MAX. 80 2 UNIT mA mA dB d...
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