UPG110P

DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment. FEATURES Ultra wide band : 2 to 8 GHz High Power Gain : GP = 15 dB TYP. Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz ORDERING INFORMATION PART NUMBER FORM Chip µPG110P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VIN Pin Ptot*1 Topr*2 Tstg +10 –5 to +0.6 +10 1.5 –65 to +125 –65 to +125 V V dBm W °C °C *1 Mounted with AuSn hard solder *2 The temperature of base material beside the chip RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Supply Voltage Input Power VDD Pin +8 ± 0.2 –5 V dBm Document No. P11882EJ2V0DS00 (2nd edition) (Previous No. ID-2454) Date Published September 1996 P Printed in Japan © 1989 µPG110P ELECTRICAL CHARACTERISTICS (TA = 25 °C)*3 CHARACTERISTIC Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD GP MIN. 65 12 TYP. 135 15 ± 1.5 6 7 30 10 10 10 40 14 MAX. 180 UNIT mA dB dB dB dB dB dBm TEST CONDITIONS VDD = +8 V f = 2 to 8 GHz ∆G P RLin RLout ISL ...