UPG139GV

DATA SHEET GaAs INTEGRATED CIRCUIT µPG139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package available on tape-and-reel and easy to install and contributes to miniaturizing the systems. FEATURES { High-Power Switching : Pin(1 dB) = +34 dBm typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 100 M to 2 GHz Pin(0.5 dB) = +36 dBm typ. @ANT1, 2-TX, VDD = 5.0 V, VCONT = 5.0 V, f = 100 M to 2 GHz { Low Insertion Loss : Lins1 = 0.70 dB typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 1 GHz Lins4 = 0.85 dB typ. @ANT1, 2-RX, VDD = 3.0 V, VCONT = 3.6 V, f = 1 GHz { Small 8-pin SSOP (175 mil) Package APPLICATION { Digital Cellular: PDC, GSM, IS-95, IS-136 etc. { PCS, PHS Base station etc. ORDERING INFORMATION Part Number Package 8-pin SSOP (175 mil) Packing Form Carrier tape width is 12 mm, Quantity is 2 kpcs per reel. µPG139GV-E1 Remark Caution For sample order, please contact your local NEC sales office. (Part number for sample order: µPG139GV) The IC must be handled with care to prevent static discharge because its circuit composed of GaAs MESFET. The information in this document is subject to change without notice. Document No. P13144EJ2V0DS00 (2nd edition) Date Published July 1998 N CP(K) Printed in Japan T...