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UPG175TA

NEC

L-Band PA DRIVER AMPLIFIER

PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG175TA L-Band PA DRIVER AMPLIFIER DESCRIPTION µPG175TA is a GaAs MM...


NEC

UPG175TA

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Description
PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG175TA L-Band PA DRIVER AMPLIFIER DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES Low Operation Voltage: VDD1 = VDD2 = 3.0 V fRF: 925 to 960 MHz@ Pout = +9 dBm Low distortion: Padj1 = –60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching Variable gain control function: ∆G = 35 dB typ. @ VAGC = 0.5 to 2.5 V 6 pin mini-mold package APPLICATION Digital Cellular: PDC800M, etc. ORDERING INFORMATION (PLAN) PART NUMBER PACKAGE 6 pin Mini-mold PACKING FORM Carrier tape width is 8 mm, Quantity is 3 kpcs per reel. µPG175TA-E3 Remark For sample order, please contact your local NEC sales office. (Part number for sample order: µPG175TA) Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs HJ-FET. The information in this document is subject to change without notice. Document No. P13470EJ1V0DS00 (1st edition) Date Published May 1998 N CP(K) Printed in Japan © 1998 µPG175TA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PARAMETERS Supply Voltage AGC Control Voltage Input Power Total Power Dissipation Op...




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