L-Band PA DRIVER AMPLIFIER
PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG175TA
L-Band PA DRIVER AMPLIFIER
DESCRIPTION
µPG175TA is a GaAs MM...
Description
PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG175TA
L-Band PA DRIVER AMPLIFIER
DESCRIPTION
µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC
(Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion.
FEATURES
Low Operation Voltage: VDD1 = VDD2 = 3.0 V fRF: 925 to 960 MHz@ Pout = +9 dBm Low distortion: Padj1 = –60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching Variable gain control function: ∆G = 35 dB typ. @ VAGC = 0.5 to 2.5 V 6 pin mini-mold package
APPLICATION
Digital Cellular: PDC800M, etc.
ORDERING INFORMATION (PLAN)
PART NUMBER PACKAGE 6 pin Mini-mold PACKING FORM Carrier tape width is 8 mm, Quantity is 3 kpcs per reel.
µPG175TA-E3
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: µPG175TA)
Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs HJ-FET.
The information in this document is subject to change without notice.
Document No. P13470EJ1V0DS00 (1st edition) Date Published May 1998 N CP(K) Printed in Japan
©
1998
µPG175TA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETERS Supply Voltage AGC Control Voltage Input Power Total Power Dissipation Op...
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