avalanche rectifiers. US1B Datasheet

US1B rectifiers. Datasheet pdf. Equivalent


NXP US1B
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
US1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Feb 14


US1B Datasheet
Recommendation US1B Datasheet
Part US1B
Description SMA ultra fast low-loss controlled avalanche rectifiers
Feature US1B; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 US1 series SMA ultra fast low-loss contr.
Manufacture NXP
Datasheet
Download US1B Datasheet




NXP US1B
Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
FEATURES
Glass passivated
High maximum operating temperature
Ideal for surface mount automotive applications
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
UL 94V-O classified plastic package
Shipped in 12 mm embossed tape
Marking: cathode, date code, type code
Easy pick and place.
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
olumns
k
cathode
band
a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
US1A
US1B
US1D
US1G
US1J
VR continuous reverse voltage
US1A
US1B
US1D
US1G
US1J
VRMS
root mean square voltage
US1A
US1B
US1D
US1G
US1J
IF(AV)
average forward current
CONDITIONS
averaged over any 20 ms period;
Ttp = 110 °C; see Fig.2
MIN. MAX. UNIT
50 V
100 V
200 V
400 V
600 V
50 V
100 V
200 V
400 V
600 V
35 V
70 V
140 V
280 V
420 V
1A
2000 Feb 14
2



NXP US1B
Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
SYMBOL
PARAMETER
IFSM non-repetitive peak forward current
Tstg storage temperature
Tj junction temperature
CONDITIONS
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
25 A
65 +175 °C
65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF forward voltage
US1A to US1G
IF = 1 A;
see Fig.4
US1J
see Fig.5
IR reverse current
VR = VRRMmax; see Figs 6 and 7
VR = VRRMmax; Tj = 165 °C; see Figs 6 and 7
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.12
Cd diode capacitance VR = 4 V; f = 1 MHz;
US1A to US1G
see Fig.8
US1J
see Fig.9
TYP. MAX. UNIT
1.1 V
1.4 V
10 µA
50 µA
50 ns
14
10
pF
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.10
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3







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