EFFICIENT RECTIFIER. US1B Datasheet

US1B RECTIFIER. Datasheet pdf. Equivalent


General Semiconductor US1B
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
US1A THRU US1J
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 1.0 Ampere
0.065 (1.65)
0.049 (1.25)
0.090 (2.29)
0.078 (1.98)
DO-214AC
0.177 (4.50)
0.157 (3.99)
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Glass passivated chip junctions
Low profile package
Easy pick and place
Ultrafast recovery times for high efficiency
Low forward voltage, low power loss
Built-in strain relief, ideal for automated placement
High temperature soldering guaranteed:
250°C/10 seconds on terminals
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Device Marking Code
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forward rectified current
at TL=110°C
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
Maximum instantaneous forward voltage at 1.0A
VF
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
IR
US1A
UA
50
35
50
US1B
UB
100
70
100
US1D
UD
200
140
200
1.0
US1G
UG
400
280
400
30.0
1.0
10.0
50.0
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Maximum thermal resistance (NOTE 3)
Operating and storage temperature range
trr
CJ
RΘJA
RΘJL
TJ, TSTG
50.0
17.0
75.0
27.0
-55 to +150
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
US1J
UJ
600
420
600
UNITS
Volts
Volts
Volts
Amp
Amps
1.7 Volts
µA
75.0 ns
15.0 pF
°C/W
°C
4/98


US1B Datasheet
Recommendation US1B Datasheet
Part US1B
Description SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER
Feature US1B; NEW PRODUCT NEW PRODUCT NEW PRODUCT US1A THRU US1J SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER Re.
Manufacture General Semiconductor
Datasheet
Download US1B Datasheet




General Semiconductor US1B
RATING AND CHARACTERISTIC CURVES US1A THRU US1J
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.2
RESISTIVE OR INDUCTIVE LOAD
1.0
0.8
0.6
1.0
0.2
0
0
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
20 40 60
80
100 120
LEAD TEMPERATURE, °C
140
150
30
25
20
15
10
5
0
1
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TL=110°C
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
US1A THRU US1G
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
US1J - US1M
1
10 TJ=150°C
TJ=125°C
TJ=25°C
TJ=100°C
PULSE WIDTH=300µs
0.1
1% DUTY CYCLE
1
0.01
TJ=25°C
0.1
0.001
0.4
0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.8
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
US1A - US1G
TJ=25°C
f=1.0 MHZ
Vsiq=50mVp-p
10 US1J - US1M
0.01
0
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
1
0.1 1 10
REVERSE VOLTAGE, VOLTS
100
0.1
0.01
0.1 1 10
t, PULSE DURATION, sec
100





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