P-Channel 2.5V Specified PowerTrenchTM MOSFET
June 1999
USB10P P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P -Channel 2.5V specified MOSFE...
Description
June 1999
USB10P P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
2
G D D
pin 1 TM
5
3
4
SuperSOT -6
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise note
Ratings
Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1a)
-20 ±8 -4.5 -20 1.6 0.8 -55 to 150
V V A
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
©1999 Fairchild Semiconductor Corporation
USB10P Rev.D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise no...
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