UTC2SA1020

UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE -50 -50 -5 -2 0.5 1 150 -55 ~ +150 UNIT V V V A W W °C °C Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 × 0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current Collector to emitter breakdown voltage DC Current Gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Switching time Turn-on time Storage time Fall time SYMBOL ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf TEST CONDITIONS VCB=-50V, IE=0 VEB=-5V, IC=0 Ic=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz MIN TYP MAX -1.0 -1.0 UNIT µA µA V -50 70 40 240 -0.5 -1.2 100 40 0.1 1.0 0.1 V V MHz pF µs µs µs UTC UNISONIC TECHNOLOGIES CO. LTD 1 Q...