UTC 2SB834
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applicat...
UTC 2SB834
PNP EPITAXIAL SILICON
TRANSISTOR
HIGH VOLTAGE
TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature Base Current
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG IB
RATING
60 60 7 30 3 150 -55 ~ +150 0.5
UNIT
V V V W A °C °C A
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Collector-emitter on voltage DC current gain Current gain bandwidth product
SYMBOL
BVCEO ICBO IEBO VCE(SAT) VCE(ON) hFE1 hFE2 fT
TEST CONDITIONS
Ic=50mA VCB=60V VEB=7V IC=3A,IB=0.3A VCE=5V,IC=0.5A IC=0.5A,VCE=5V IC=3A,VCE=5V VCE=5V,IC=0.5A
MIN
60
TYP
MAX
100 100 1 1 300
UNIT
V µA µA V V
0.7 60 20 9
MHZ
CLASSIFICATION of hFE1
RANK RANGE O 60-120 Y 100-200 GR 150-300
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-014,A
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