DEVICE. TSP275B Datasheet

TSP275B Datasheet PDF


Part

TSP275B

Description

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

Manufacture

Pan Jit International Inc.

Page 7 Pages
Datasheet
Download TSP275B Datasheet


TSP275B Datasheet
TSP058B - TSP320B
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Protects by limiting voltages and shunting surge currents away from sensitive circuits
• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
DO-15
SUMMARY ELECTRICAL CHARACTERISTICS
Part Number
TSP058B
TSP065B
TSP075B
TSP090B
TSP120B
TSP140B
TSP160B
TSP190B
TSP220B
TSP275B
TSP320B
notes
Rated Repetitive
PeakOff-State
Voltage
Max.
VDRM
V
58
65
75
90
120
140
160
190
220
275
320
(1,3)
Breakover
Voltage
Max.
VBO @ IBO
V
77
88
98
130
160
180
220
260
300
350
400
(3,5,6)
On-State
Voltage
Repetitive
PeakOff-State
Current
Breakover
Current
Holding
Currnet
Off-State Capacitance
(f = 1 MHz, Vac = 15 mVRMS)
Max.
VT @ 1A
V
5
5
5
5
5
5
5
5
5
5
5
(3)
Max.
I DRM
µA
5
5
5
5
5
5
5
5
5
5
5
(3)
Max.
I BO
mA
800
800
800
800
800
800
800
800
800
800
800
(3)
Min.
IH
mA
150
150
150
150
150
150
150
150
150
150
150
(2,3)
Typ. Max.
CO @ 0 Vdc
pF
70 100
67 90
67 78
57 61
50 58
49 54
46 53
45 53
44 52
44 51
43 50
(3) (3)
Typ. Max.
CO @ 50 Vdc
pF
24 29
22 28
23 27
19 21
17 20
16 19
15 18
14 18
13 18
13 18
13 17
(3) (3)
NOTES:
1. Specific VDRM values are available by request.
2. Specific IH values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device.
5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform
6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 K, 1/2 AC cycle
Ver: June 2001
PAGE 1

TSP275B Datasheet
TSP058B - TSP320B
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature.
3. Select surge current ratings (IPPS and ITSM) those which the application must withstand.
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)
Rating
Symbol
Short-Circuit Current Wave 2/10 µs
Open-Circuit Voltage Wave 2/10 µs
Value
300 A
Notes
Non-Repetitive Peak Pulse Current
I PPS
8/20 µs 10/160 µs 5/310 µs 10/560 µs 10/1000 µs
1.2/50 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs
225 A
150 A
115 A
100 A
80 A
(1,2,4,5,6)
Non-Repetitive Peak
On-State Surge Current
I TSM
30A
(1,2,3,4)
Notes:
1. Thermal accumulation between successive surge tests is
not allowed.
2. The device under test initially must be in thermal
equilibrium with TJ = 25 °C.
% Ipps
100%
80%
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated TJ.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.
60%
40%
20%
5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.
0%
To Ta
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B (Duration time to 50% level of Ipps) = T1 - T0
Ver: June 2001
Tb
Time
T1
PAGE 2


Features Datasheet pdf TSP058B - TSP320B Breakover Voltage Max . VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6) On-State Volta ge Max. V T @ 1A V 5 5 5 5 5 5 5 5 5 5 5 (3) Part Number Max. VDRM V Max. I DRM µA 5 5 5 5 5 5 5 5 5 5 5 (3) Max . I BO mA 800 800 800 800 800 800 800 8 00 800 800 800 (3) Min. IH mA 150 150 150 150 150 150 150 150 150 150 150 (2, 3) Typ. pF 70 67 67 57 50 49 46 45 44 44 43 (3) Max. Typ. pF Max. C O @ 0 V dc 100 90 78 61 58 54 53 53 52 51 50 (3) C O @ 5 0 V dc 24 22 23 19 17 16 15 14 13 13 13 (3) 29 28 27 21 20 19 18 18 18 18 17 (3) TSP058B TSP065B TSP07 5B TSP090B TSP120B TSP140B TSP160B TSP1 90B TSP220B TSP275B TSP320B notes 58 6 5 75 90 120 140 160 190 220 275 320 (1, 3) NOTES: 1. Specific VDRM values are available by request. 2. Specific IH va lues are available by request. 3. All r atings and characteristics are at 25 ° C unless otherwise specified. 4. VDRM a pplies for the life of the device. IDRM will be in spec during and following operation of the device. 5..
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