TSTA7100

TSTA7100 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a very high radiant intensity without external optics. Features D D D D D D D Extra high radiant intensity High radiant power Suitable for pulse operation Narrow angle of half intensity ϕ = ± 5° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8483 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 100 200 2.5 180 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W tp/T = 0.5, tp tp 100 ms x x 100 ms Tcase x 25 °C Document Number 81044 Rev. 2, 20-May-99 www.vishay.de FaxBack +1-408-970-5600 1 (6) TSTA7100 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 2...