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TSTA7500 Dataheets PDF



Part Number TSTA7500
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case
Datasheet TSTA7500 DatasheetTSTA7500 Datasheet (PDF)

TSTA7500 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it ideal for use with external optics. Features D D D D D D High radiant power Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8400 App.

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TSTA7500 Vishay Telefunken GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it ideal for use with external optics. Features D D D D D D High radiant power Suitable for pulse operation Wide angle of half intensity ϕ = ± 30° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 100 200 2.5 180 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W tp/T = 0.5, tp tp 100 ms x x 100 ms Tcase x 25 °C Document Number 81046 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSTA7500 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 20 ms IF = 100 mA, tp 20 ms IF = 100 mA x x x Symbol VF V(BR) Cj Ie TKfe ϕ Min 5 3.5 Typ 1.4 20 6 10 –0.7 ±30 875 80 300 300 Max 1.8 fe IF = 100 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp 10 ms IF = 1.5 A, tp/T = 0.01, tp 10 ms lp Dl tr tf x x Unit V V pF mW/sr mW %/K deg nm nm ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 600 PV – Power Dissipation ( mW ) IF – Forward Current ( mA ) 500 400 300 200 RthJA 100 0 0 12790 125 RthJC 100 RthJC 75 50 RthJA 25 0 25 50 75 100 125 94 7971 e 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81046 Rev. 2, 20-May-99 TSTA7500 Vishay Telefunken 101 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 1000 IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 100 0.05 0.1 0.2 0.5 10–1 10–2 100 tp = 10 ms tp / T = 0.001 10 1 10–1 100 101 tp – Pulse Duration ( ms ) 102 94 8188 100 94 8003 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration 104 IF – Forward Current ( mA ) Figure 6. Radiant Intensity vs. Forward Current 1000 Fe – Radiant Power ( mW ) 2 3 4 103 tp = 100 ms tp / T = 0.001 100 10 102 1 101 0 94 8005 e 0.1 1 100 94 7972 e VF – Forward Voltage ( V ) 101 102 103 IF – Forward Current ( mA ) 104 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel – Relative Forward.


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