TSTS7501 Datasheet PDF


Part Number

TSTS7501

Description

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Manufacture

Vishay Telefunken

Total Page 5 Pages
PDF Download
Download TSTS7501 Datasheet PDF


Features Datasheet pdf TSTS750. Vishay Telefunken GaAs IR Emit ting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series a re infrared emitting diodes in standard GaAs technology in a hermetically seal ed TO–18 package. Their flat glass wi ndows make them ideal for use with exte rnal optics. Features D D D D D Suitab le for pulse operation Wide angle of ha lf intensity ϕ = ± 30° Peak waveleng th lp = 950 nm High reliability Good sp ectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse V oltage Forward Current Peak Forward Cur rent Surge Forward Current Power Dissip ation Junction Temperature Storage Temper.
Keywords TSTS7501, datasheet, pdf, Vishay Telefunken, GaAs, IR, Emitting, Diodes, in, Hermetically, Sealed, TO18, Case, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

TSTS7501 Datasheet
TSTS750.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS750. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO–18 package. Their flat glass windows make them
ideal for use with external optics.
Features
D Suitable for pulse operation
D Wide angle of half intensity ϕ = ± 30°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
94 8400
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
xTcase 25 °C
xtp/T = 0.5, tp 100 ms,
xTcase 25 °C
xtp 100 ms
xTcase 25 °C
Symbol
VR
IF
IFM
IFSM
PV
PV
Tj
Tstg
RthJA
RthJC
Value
5
250
500
2.5
170
500
100
–55...+100
450
150
Unit
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
Document Number 81049
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)