TO18 Case. TSTS7502 Datasheet

TSTS7502 Datasheet PDF, Equivalent


Part Number

TSTS7502

Description

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Manufacture

Vishay Telefunken

Total Page 5 Pages
PDF Download
Download TSTS7502 Datasheet PDF


TSTS7502 Datasheet
TSTS750.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS750. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO–18 package. Their flat glass windows make them
ideal for use with external optics.
Features
D Suitable for pulse operation
D Wide angle of half intensity ϕ = ± 30°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
94 8400
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
xTcase 25 °C
xtp/T = 0.5, tp 100 ms,
xTcase 25 °C
xtp 100 ms
xTcase 25 °C
Symbol
VR
IF
IFM
IFSM
PV
PV
Tj
Tstg
RthJA
RthJC
Value
5
250
500
2.5
170
500
100
–55...+100
450
150
Unit
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
Document Number 81049
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

TSTS7502 Datasheet
TSTS750.
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise Time
Fall Time
xTest Conditions
IF = 100 mA, tp 20 ms
IR = 100 mA
Symbol
VF
V(BR)
Min
5
Typ Max Unit
1.3 1.7 V
V
xVR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp 20 ms
Cj
fe
30 pF
7 mW
IF = 100 mA
TKfe
–0.8
%/K
ϕ ±30 deg
IF = 100 mA
IF = 100 mA
lp 950 nm
Dl 50 nm
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tr
400 ns
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tf
400 ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Radiant Intensity
Test Conditions
Type
Symbol Min Typ Max Unit
IF=100mA, tp=20ms
TSTS7500
TSTS7501
TSTS7502
TSTS7503
Ie 1.25 1.6
mW/sr
Ie 1.6 2.5 3.2 mW/sr
Ie 2.5 4
5 mW/sr
Ie 4 6.3 8 mW/sr
Typical Characteristics (Tamb = 25_C unless otherwise specified)
600
RthJC
500
300
250
400
300
200
RthJA
100
200
150
RthJA
100
50
RthJC
0
0
94 8017 e
25 50 75 100 125
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
94 8018 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81049
Rev. 2, 20-May-99


Features Datasheet pdf TSTS750. Vishay Telefunken GaAs IR Emit ting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series a re infrared emitting diodes in standard GaAs technology in a hermetically seal ed TO–18 package. Their flat glass wi ndows make them ideal for use with exte rnal optics. Features D D D D D Suitab le for pulse operation Wide angle of ha lf intensity ϕ = ± 30° Peak waveleng th lp = 950 nm High reliability Good sp ectral matching to Si photodetectors 94 8400 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse V oltage Forward Current Peak Forward Cur rent Surge Forward Current Power Dissip ation Junction Temperature Storage Temp erature Range Thermal Resistance Juncti on/Ambient Thermal Resistance Junction/ Case Test Conditions Tcase 25 °C tp/T = 0.5, tp 100 ms, Tcase 25 °C tp 100 m s Symbol VR IF IFM IFSM PV PV Tj Tstg R thJA RthJC Value 5 250 500 2.5 170 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W x x x x .
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