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TV1822K Dataheets PDF



Part Number TV1822K
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Recovery Diode
Datasheet TV1822K DatasheetTV1822K Datasheet (PDF)

TV18..F TV18..F Fast Recovery Diode Replaces March 1998 version, DS4211-2.2 DS4211-3.0 January 2000 APPLICATIONS s Induction Heating s A.C. Motor Drives s Snubber Diode s Welding s High Frequency Rectification s UPS KEY PARAMETERS VRRM 2500V IF(AV) 200A IFSM 3500A Qr 240µC trr 2.0µs FEATURES s Thermal Fatigue Free Pressure Contact s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 2500 2400 2200 2000 Conditions TV18 25F M or K T.

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TV18..F TV18..F Fast Recovery Diode Replaces March 1998 version, DS4211-2.2 DS4211-3.0 January 2000 APPLICATIONS s Induction Heating s A.C. Motor Drives s Snubber Diode s Welding s High Frequency Rectification s UPS KEY PARAMETERS VRRM 2500V IF(AV) 200A IFSM 3500A Qr 240µC trr 2.0µs FEATURES s Thermal Fatigue Free Pressure Contact s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 2500 2400 2200 2000 Conditions TV18 25F M or K TV18 24F M or K TV18 22F M or K TV18 20F M or K VRSM = VRRM + 100V For 3/4" 16 UNF thread, add suffix K, e.g. TV18 25FK. For M16 thread, add suffix M, e.g. TV18 25FM. For stud anode add 'R' to type number, e.g. TV18 25FMR. Outline type codes: DO9. See Package Details for further information. CURRENT RATINGS Symbol IF(AV) IF(RMS) Parameter Mean forward current RMS value Conditions Half wave resistive load, Tcase = 65oC Tcase = 65oC Max. 200 320 Units A A 1/8 TV18..F SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing 39.2x 103 A2s 61 x 103 2.8 A2s kA Conditions Max. 3.5 Units kA THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Tvj Tstg Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Storage temperature range Mounting torque Mounting torque 35.0Nm with mounting compound On-state (conducting) Conditions dc Min. -55 30.0 Max. 0.16 0.06 150 175 35.0 Units o C/W o C/W o C C o Nm CHARACTERISTICS Symbol VFM IRRM trr QRA1 IRM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 150oC At Tvj = 150oC di/dt = 1000A/µs, Tj = 125oC IF = 1000A, diRR/dt = 100A/µs Tcase = 150oC, VR = 100V Parameter Conditions At 1000A peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 1.3 Max. 3.1 50 3.2 240 160 1.64 1.54 120 Units V mA µs µC A V mΩ V 2/8 TV18..F DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR IRR t1 t2 k = t1/t2 τ CURVES 2000 Measured under pulse conditions 1750 Instantaneous forward current IF - (A) 1500 1250 Tj = 150˚C 1000 Tj = 25˚C 750 500 1.0 2.0 3.0 4.0 5.0 Instantaneous forward voltage VF - (V) Fig.1 Maximum (limit) forward characteristics 3/8 TV18..F 500 Measured under pulse conditions 400 Instantaneous forward current IF - (A) Tj = 150˚C 300 Tj = 25˚C 200 100 0 1.0 1.5 2.0 2.5 3.0 Instantaneous forward voltage VF - (V) Fig.2 Maximum (limit) forward characteristics 250 Current waveform VFR 200 Transient forward votage VFP - (V) Voltage waveform δy δx Tj = 100˚C limit di = δy dt δx 150 100 Tj = 25˚C limit 50 0 0 500 1000 1500 2000 Rate of rise of forward current dIF/dt - (A/µs) Fig.3 Transient forward voltage vs rate of rise of forward current 4/8 TV18..F 10000 IF QS = ∫ 50µs 0 Conditions: Tj = 150˚C, QS VR = 100V Reverse recovered charge QS - (µC) 1000 tp = 1ms dIR/dt IRR IF = 1000A IF = 750A IF = 500A IF = 200A IF = 100A 100 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) Fig.4 Recovered charge 1000 10000 Conditions: Tj = 150˚C, VR = 100V IF = 1000A IF = 750A IF = 500A IF = 200A 100 IF = 100A Reverse recovery current IRR - (A) 10 1 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.5 Typical reverse recovery current vs rate of rise of reverse current 5/8 TV18..F 0.100 Thermal impedance - (˚C/W) d.c. 0.010 0.001 0.01 0.1 1 Time - (s) 10 100 Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 6/8 TV18..F PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Ø4 Ø12.5 ± 0.5 12 min 20 ± 2 230 ± 10 230 ± 10 Hex. 32AF No type + K - 27 ± 0.5 No type + M - 18 ± 0.5 10 min 3.17 max K Thread 3/4" 16 UNF M Thread M16 ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Thyristor and diode measurement with a multi-meter Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4853 AN5001 7/8 TV18..F POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to dat.


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