Document
TV22..F
TV22..F
Fast Recovery Diode
Replaces March 1998 version, DS4210-2.2 DS4210-3.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Snubber Diode s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V IF(AV) 305A IFSM 5000A Qr 70µC trr 3.2µs
FEATURES
s Thermal Fatigue Free Pressure Contact s High Surge Capability s Low Recovery Charge
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V Conditions
TV22 16F M or K VRSM = VRRM + 100V 1600 TV22 14F M or K 1400 TV22 12F M or K 1200 TV22 10F M or K 1000 TV22 08F M or K 800 TV22 06F M or K 600 For 3/4" 16 UNF thread, add suffix K, e.g. TV22 16FK. For M16 thread, add suffix M, e.g. TV22 16FM. For stud anode add 'R' to type number, e.g. TV22 16FMR.
Outline type codes: DO9. See Package Details for further information.
CURRENT RATINGS
Symbol IF(AV) IF(RMS) Parameter Mean forward current RMS value Conditions Half wave resistive load, Tcase = 65oC Tcase = 65oC Max. 305 346 Units A A
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SURGE RATINGS
Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing A2s 125 x 103 A2s kA Conditions Max. 5.0 Units kA
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Tvj Tstg Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Storage temperature range Mounting torque Mounting torque 35.0Nm with mounting compound On-state (conducting) Conditions dc Min. -55 30.0 Max. 0.16 0.06 150 175 35.0 Units
o
C/W
o
C/W
o
C C
o
Nm
CHARACTERISTICS
Symbol VFM IRRM trr QRA1 IRM K VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 150oC At Tvj = 150oC di/dt = 1000A/µs, Tj = 125oC IF = 750A, diRR/dt = 100A/µs Tcase = 125oC, VR = 100V Parameter Conditions At 750A peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 1.8 Max. 1.6 40 3.2 70 43 1.0 0.8 Units V mA
µs
µC A V mΩ V
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DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR IRR t1 t2 k = t1/t2 τ
CURVES
3000 Measured under pulse conditions
2500
Instantaneous forward current IF - (A)
2000
Tj = 150˚C 1500
Tj = 25˚C 1000
500 1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
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500 Measured under pulse conditions
400
Instantaneous forward current IF - (A)
300 Tj = 150˚C
200
Tj = 25˚C
100
0 0.95
1.05
1.15
1.25
1.35
1.45
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
10000 IF QS = ∫
50µs 0
Conditions: Tj = 125˚C, QS VR = 100V
Reverse recovered charge QS - (µC)
1000
tp = 1ms dIR/dt IRR IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A
100
10
1
10 100 Rate of rise of reverse current dIR/dt - (A/µs)
Fig.3 Recovered charge
1000
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1000 Conditions: Tj = 125˚C, VR = 100V IF = 2000A
Reverse recovery current IRR - (A)
IF = 1000A IF = 500A IF = 200A 100 IF = 100A
10
1
10 100 Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of reverse current
0.100
Thermal impedance - (˚C/W)
d.c. 0.010
0.001 0.01
0.1
1 Time - (s)
10
100
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Ø4
Ø12.5 ± 0.5 12 min
20 ± 2
230 ± 10
Hex. 32AF
230 ± 10 No type + K - 27 ± 0.5 No type + M - 18 ± 0.5 10 min
3.17 max
K Thread 3/4" 16 UNF M Thread M16
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Thyristor and diode measurement with a multi-meter Use of VTO, rT on-state characteristic 6/7 Application Note Number AN4506 AN4853 AN5001
TV22..F
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data .