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TVR1G

Toshiba Semiconductor

TOSHIBA Fast Recovery Diode Silicon Diffused Type


Description
TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications (fast recovery) Unit: mm Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.0 µs · · · Maximum Ratings (Ta = 25°C) Characteristics TVR1B Repetitive peak reverse volta...



Toshiba Semiconductor

TVR1G

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