TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
TVR4J,TVR4N
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recov...
Description
TVR4J,TVR4N
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
· · · ·
Maximum Ratings (Ta = 25°C)
Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.2 100 (50 Hz) -40 to 150 -40 to 150 Unit V A A °C °C
Average forward current (Ta = 55°C ) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 3-4B1A
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Thermal resistance (junction to ambient) Symbol VFM IRRM trr Rth (j-a) IFM = 5 A VRRM = Rated IF = 20 mA, IR = 1 mA DC Test Condition
Weight: 0.47 g (typ.)
Min ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ Max 1.2 10 20 80 Unit V mA ms °C/W
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part. Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Marking
Type Code Lot No. Code VR 4J Month (starting from alphabet A) Year (last number of the christian era) Cathode Mark Color: Silver VR4J VR4N Type TVR4J TVR4N
1
2002-09-18
TVR4J,TVR4N
iF – vF
30
rth (j-a) – t
Ta = 25°C 100
(A)
10 5 3 150 Tj = 25°C
Instantaneous forward current
Transient thermal ...
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