TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR5B,TVR5G,TVR5J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR5B,TVR5G,TVR5J
TV Applications (fast recovery)
U...
Description
TVR5B,TVR5G,TVR5J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR5B,TVR5G,TVR5J
TV Applications (fast recovery)
Unit: mm Average Forward Current: IF (AV) =0.5 A Repetitive Peak Reverse Voltage: VRRM = 100 V, 400V, 600V Reverse Recovery Time: trr = 1.5 µs
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics TVR5B Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range TVR5G TVR5J IF (AV) IFSM Tj Tstg VRRM Symbol Rating 100 400 600 0.5 20 -40 to 125 -40 to 125 A A °C °C V Unit
JEDEC JEITA TOSHIBA
― ― 3-3F2A
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Symbol VFM IRRM trr (1) trr (2) Test Condition IFM = 0.5 A VRRM = Rated IF = 20 mA, IR = 1 mA IF = 100 mA, IR = 100 mA
Weight: 0.18 g (typ.)
Min ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ Max 1.2 10 1.5 500 Unit V mA ms ms
Marking
Type Code Lot No. Code V5J Month (starting from alphabet A) Year (last number of the christian era) Cathode Mark Color: Silver V5B V5G V5J Type TVR5B TVR5G TVR5J
1
2002-09-18
TVR5B,TVR5G,TVR5J
iF – vF
0.7
PF (AV) – IF (AV)
(A)
Instantaneous forward current
5 3 Tj = 125°C 1 0.5 0.3 25
Average forward power dissipation PF (AV) (W)
10
0.6 0.5 0.4 0.3 0.2 180° 0.1 0 0 360° Rectangular waveform
iF
0.1 0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous forward voltage
vF
(V)
Average forward ...
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