TVU0.5B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU0.5B is Designed for
PACKAGE STYLE .205 4L STUD
D
FEA...
TVU0.5B
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TVU0.5B is Designed for
PACKAGE STYLE .205 4L STUD
D
FEATURES:
Omnigold™ Metalization System
A C
B
G F
E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.0 A 45 V 25 V 3.5 V 31.8 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 33 OC/W
O O O
DIM A B C D E F G H I J
H
#8-32UNC
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100
1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800
.196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200
ORDER CODE: ASI10642
CHARACTERISTICS
SYMBOL
BVCBO BVCE BVEBO ICBO hFE PG IMD1
TC = 25 C
O
NONETEST CONDITIONS
IC = 1.0 mA IC = 20 mA IE = 0.25 mA VCB = 28 V VCE = 5.0 V VCE = 20 V POUT = 0.5 W IC = 100 mA IC = 150 mA f = 860 MHz
MINIMUM TYPICAL MAXIMUM
45 24 3.5 0.45 15 12 -58 120
UNITS
V V V mA --dB dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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