TVU150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU150 is Designed for
PACKAGE STYLE .400 BAL FLG(C)
.080x...
TVU150
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TVU150 is Designed for
PACKAGE STYLE .400 BAL FLG(C)
.080x45° A B FULL R (4X).060 R
FEATURES:
Input Matching Network Omnigold™ Metalization System
E D C .1925 F H I N L J K G M
MAXIMUM RATINGS
IC VCEO VCES VEBO PDISS TJ TSTG θ JC
O
DIM A B C D E F G H I J K L M N
MINIMUM
inches / mm
MAXIMUM
inches / mm
25 A 28 V 60 V 3.5 V 300 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 0.55 C/W
O O
.220 / 5.59 .210 / 5.33 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08
.230 / 5.84
.130 / 3.30 .390 / 9.91 .820 / 20.83
1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21
.395 / 10.03 .850 / 21.59
.407 / 10.34 .870 / 22.10
ORDER CODE: ASI10652
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCES BVEBO ICES hFE COB PG IMD1 Load Mismatch
TC = 25 C
O
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 30 V VCE = 5.0 V VCB = 26 V VCC = 26 V POUT = 40 W ICQ = 2 X 3000 mA IC = 1.0 A f = 1.0 MHz f = 860 MHz RBE = 200 Ω
MINIMUM TYPICAL MAXIMUM
26 35 60 3.5 30 30 40 80 4.0 10 45 75 11 -52 9.0 No Degradation in Output Power 120
UNITS
V V V V mA --pF dB dBc
VCC = 26 V ICQ = 2 X 150 mA POUT = 150 W PEP VSWR = 5:1 @ all phase angles
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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